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Flash and V-NAND

Flash memory is built from tiny memory cells that, thanks to vertical stacking technology, can be packed into remarkably dense, compact chips. This topic covers how that vertical NAND architecture works and why it was a turning point in storage capacity.

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About this video

Flash memory is made up of enormous numbers of tiny memory cells, each capable of storing a small amount of data. For years, those cells were arranged horizontally side by side, which placed hard limits on how many could fit within a given chip area. That horizontal layout meant storage density improvements required shrinking the cells themselves, an approach that eventually ran into physical and engineering constraints. The breakthrough came when engineers reoriented the design entirely, stacking memory cells vertically rather than horizontally and reshaping them into cylindrical columns. This architecture, known as vertical NAND, transformed the way storage capacity could scale. The cylindrical cells are arranged in a three-dimensional matrix, and any individual cell within that matrix is accessed by identifying its precise X, Y, and Z coordinates. Current triple-level cell technology allows each cell to store three bits of data, and stacking hundreds of these layers dramatically multiplies the total capacity available on a single chip. The result is the dense, high-capacity flash storage found in modern SSDs, smartphones, and portable devices. Vertical NAND architecture represents a foundational shift in how storage is designed, and continued refinement of this approach remains central to advances in both capacity and performance across the industry.

What you'll learn

What's covered

Vertical NAND Flash Memory

Aligned to

CompTIA Tech+
2.5 Compare and contrast storage types.
CompTIA A+ Core 1
3.3 Given a scenario, select and install storage devices.

Key terms

NAND Flash
A type of non-volatile flash memory that stores data in blocks and erases data in blocks rather than the entire chip, making it the dominant technology in modern storage devices.
Vertical NAND
V-NAND
A flash memory architecture that stacks cylindrical memory cells vertically in columns rather than horizontally, dramatically increasing storage density on a single chip.
Memory Cell
A storage unit created by adding a charge trap to a transistor, capable of permanently storing a single bit of data as either a one or zero.
3D Matrix
The three-dimensional arrangement of stacked memory cells in vertical NAND flash, organized so that any individual cell can be located using X, Y, and Z coordinates.
XYZ Coordinate
A three-axis addressing system used to identify and access a specific memory cell within a 3D NAND flash matrix.

Topics

Flash Memory V Nand 3d Nand Storage Density Memory Architecture Data Storage

Transcript

This right here is Flash. It's made up of a lot of little transistors. Actually, they're memory cells. These little memory cells are much smaller than this transistor right here, but I'm going to use this as an example of a memory cell.

Let's say we have a bunch of these and I'm going to stack them side by side. It would actually take up a lot of space to stack these horizontally. Well, what someone did is they figured out, or invented, a way to stack these vertically instead, kind of flip the design of it. And the flipping of the design of this made a huge difference on how much information we could store for every single one of these little chips that we have. It made us able to cram a lot of information into one of these little tiny chips here, and so it was a big step forward.

The NAND Part

I will say that the NAND part of this is really not a big part of our conversation. NAND is just a gate. It's a NOT AND gate, and so this is what that's represented of. It's in contrast to a NOR gate. So really this technology has to do with NAND, but that's not the most interesting part of how this works.

Vertical NAND

Before 2007, our memory cells were stacked side by side, and so it took up a lot of space from a horizontal standpoint. What a vertical NAND is, is we converted it to standing it upright. But that's not the only thing that we did. We redesigned these memory cells to be in columns, and they became very cylindrical. This made us be able to be really efficient with the way we stored our data.

So each one of these would be a memory cell, and they're cylindrical in shape and size, so they're round, and so this was able to store a bunch of data this way. And then we would access each one of these memory cells one at a time. This allowed us to squeeze things down into a much smaller compact area.

Reading a Cell in the Matrix

I'm on this storagenewsletter.com to show you a diagram that they have, and this diagram shows these cylindrical memory cells that we have right here. Remember, each one of these memory cells, right now we're at triple level cells, can store three bits of information, and then we stack them on top of each other, creating this matrix of data. To access the data on any one of these cells within the matrix, we have to specify a certain X, Y and Z coordinate in order to understand and read that piece of data. And so we go through and we are able to capture different data within this matrix.

I did jump on one other site here, Tom's Hardware, so that we can see this from a little different perspective. Here we have those memory cells all stacked up, those vertical NANDs, and we see it right here too. So there's two stacks of them, right here and here, and then within there, all of this really is so that we can access that matrix. So there's still a lot of components that go in here just so we can select the proper memory cell and read from that memory cell.

It really does quite blow my mind how much memory we can stuff on these little tiny chips, and how much we continue to improve to put more and more on it. It's really quite crazy how far we've come with this technology, and thank goodness too, because it's a huge part of how we operate and how fast our computers have gotten because of this.

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